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Data wydania

2018 rok - 2018 rok

Autor

Cena

592,00 zł - 593,00 zł

Czas dostawy

2 dni - 2 dni

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Electrical Properties of...

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Autor: Mengqi Fu
Data wydania: 2018
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for
592,00 zł